|Electronics and Electrical Engineering||The University of Edinburgh|
The objective of this research is to design fabricate and electrically test silicon MOSFETs subjected to a novel gettering technique that uses cavities generated by ion implantation. Gettering techniques such as these are a critical process in the SIA Roadmap and are increasing in importance with smaller device geometries. Project partners are the University of Salford, where the physics of cavity formation will be studied, and Motorola Ltd where engineering batches will be processed and statistical data on the process will be compiled.
The specific aims of the project are:
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Revision Date: 2nd March 1999
Published by the Department of Electronics and Electrical Engineering, © 1998 The University of Edinburgh